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| DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter age BFG198 4 1 Top view 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain up to Ts = 135 C (note 1) IC = 50 mA; VCE = 5 V; Tj = 25 C IC = 50 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 C Vo output voltage dim = -60 dB; IC = 70 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; f(p+q-r) = 793.25 MHz open base CONDITIONS open emitter - - - - 40 - - - - MIN. - - - - 90 8 18 15 700 TYP. MAX. 20 10 100 1 - - - - - GHz dB dB mV UNIT V V mA W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. 1995 Sep 12 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 135 C (note 1) open emitter open base open collector CONDITIONS - - - - - -65 - MIN. MAX. 20 10 2.5 100 1 +150 175 UNIT V V V mA W C C Philips Semiconductors Product specification NPN 8 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IE = 0; VCB = 5 V IC = 50 mA; VCE = 5 V IE = ie = 0; VCB = 8 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 8 V; f = 1 MHz IC = 50 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 C Vo d2 Note output voltage second order intermodulation distortion note 2 note 3 note 4 - 40 - - - - - - - - - MIN. - 90 1.5 4 0.8 8 18 15 750 700 -55 TYP. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 135 C (note 1) BFG198 VALUE 40 UNIT K/W MAX. 100 - - - - - - - - - - UNIT nA pF pF pF GHz dB dB mV mV dB s 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------ dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) 2. dim = -60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = -60 dB; Vq = Vo -6 dB; fp = 445.25 MHz; Vr = Vo -6 dB; fq = 453.25 MHz; fr = 455.25 MHz measured at f(p+q-r) = 443.25 MHz. 3. dim = -60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = -60 dB; fp = 795.25 MHz; Vq = Vo -6 dB; fq = 803.25 MHz; Vr = Vo -6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. 4. IC = 50 mA; VCE = 8 V; Vo = 50 dBmV; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz. 1995 Sep 12 3 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 handbook, full pagewidth VBB C3 C1 input 75 C2 , C5 L4 L3 C4 L5 L6 C6 R1 R2 L1 L2 DUT R3 R4 MBB754 VCC = 8 V output 75 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. List of components (see test circuit) DESIGNATION C2 C1, C4, C6, C7 C3 C5 (note 1) C8 L1 (note 1) L2 L3 (note 1) L4 (note 1) L5 L6 R1 R2 (note 1) R3, R4 Note 1. Components C5, L1, L3, L4, and R2 are mounted on the underside of the PCB. The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (r = 2.2); thickness 116 inch; thickness of copper sheet 2 x 35 m; see Fig.2. DESCRIPTION multilayer ceramic capacitor multilayer ceramic capacitor multilayer ceramic capacitor multilayer ceramic capacitor multilayer ceramic capacitor 1.5 turns 0.4 mm copper wire microstripline 0.4 mm copper wire 0.4 mm copper wire microstripline Ferroxcube choke metal film resistor metal film resistor metal film resistor 75 24 3.6 75 5 10 220 30 nH nH H VALUE 1.2 10 10 10 1.5 UNIT pF nF nF nF pF int. dia. 3 mm; winding pitch 1 mm length 22 mm; width 2.5 mm length 30 mm length 4 mm length 19 mm; width 2.5 mm 3122 108 20153 2322 180 73103 2322 180 73221 2322 180 73309 DIMENSIONS CATALOGUE NO. 2222 851 12128 2222 590 08627 2222 851 12128 2222 629 08103 2222 851 12158 1995 Sep 12 4 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 handbook, full pagewidth C4 VBB VCC C6 R1 R3 75 input C1 C2 L1 L2 C3 R4 R2 L3 C5 L4 L6 C7 L5 C8 75 output MEA968 handbook, full pagewidth 80 mm 60 mm MEA966 handbook, full pagewidth 80 mm 60 mm mounting screws M 2.5 (8x) MEA967 Fig.3 Intermodulation distortion and second order intermodulation distortion printed-circuit board. 1995 Sep 12 5 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 MBB752 MBB267 handbook, halfpage P 1.2 tot (W) handbook, halfpage 160 1.0 h FE 0.8 120 0.6 0.4 80 0.2 0 0 50 100 150 Ts 200 ( o C) 40 0 40 80 I C (mA) 120 VCE = 5 V; Tj = 25 C. Fig.5 Fig.4 Power derating curve. DC current gain as a function of collector current. MBB751 handbook, halfpage 1.2 handbook, halfpage 10 MBB499 C re (pF) 0.8 fT (GHz) 8 6 4 0.4 2 0 0 4 8 12 16 20 VCB (V) 0 0 40 80 I C (mA) 120 IE = 0; f = 1 MHz; Tj = 25 C. VCE = 8 V; f = 1 GHz; Tamb = 25 C. Fig.6 Feedback capacitance as a function of collector-base voltage. Fig.7 Transition frequency as a function of collector current. 1995 Sep 12 6 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 handbook, halfpage 40 MBB753 MBB498 handbook, halfpage 45 G UM (dB) 30 d im (dB) 50 55 20 60 10 65 0 10 102 103 f (MHz) 104 70 20 40 60 80 100 120 I C (mA) VCE = 8 V; Vo = 750 mV; Tamb = 25 C; f(p+q-r) = 443.25 MHz. IC = 50 mA; VCE = 8 V; Tamb = 25 C; Fig.9 Fig.8 Maximum gain as a function of frequency. Intermodulation distortion as a function of collector current. MBB266 MBB497 handbook, halfpage 45 d im handbook, halfpage 35 (dB) 50 d2 (dB) 40 55 45 60 50 65 55 70 20 40 60 80 100 120 I C (mA) 60 20 40 60 80 100 120 I C (mA) VCE = 8 V; Vo = 700 mV; Tamb = 25 C; f(p+q) = 793.25 MHz. VCE = 8 V; Vo = 50 dBmV; Tamb = 25 C f(p+q) = 450 MHz. Fig.10 Intermodulation distortion as a function of collector current. Fig.11 Second order intermodulation distortion as a function of collector current. 1995 Sep 12 7 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 MBB268 handbook, halfpage 35 d2 (dB) 40 45 50 55 60 20 40 60 80 100 120 I C (mA) VCE = 8 V; Vo = 50 dBmV; Tamb = 25 C f(p+q) = 810 MHz. Fig.12 Second order intermodulation distortion as a function of collector current. 1995 Sep 12 8 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 50 handbook, full pagewidth 25 2 GHz 100 10 250 +j 0 -j 40 MHz 10 10 25 50 100 250 250 25 50 IC = 50 mA; VCE = 8 V; Tamb = 25 C; Zo = 50 . 100 MBB494 Fig.13 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 120 o 60 o 150 o 30 o 40 MHz 180 o 100 80 60 40 20 2 GHz 0o 150 o 30 o 120 o 90 o IC = 50 mA; VCE = 8 V; Tamb = 25 C. 60 o MBB496 Fig.14 Common emitter forward transmission coefficient (S21). 1995 Sep 12 9 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 90 o handbook, full pagewidth 2 GHz 60 o 120 o 150 o 30 o 0.2 0.16 180 o 0.12 0.08 0.04 40 MHz 0o 150 o 30 o 120 o 90 o IC = 50 mA; VCE = 8 V; Tamb = 25 C. 60 o MBB495 Fig.15 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 2 GHz +j 0 -j 10 25 50 100 250 250 10 40 MHz 250 25 50 IC = 50 mA; VCE = 8 V; Tamb = 25 C; Zo = 50 . 100 MBB493 Fig.16 Common emitter output reflection coefficient (S22). 1995 Sep 12 10 Philips Semiconductors Product specification NPN 8 GHz wideband transistor PACKAGE OUTLINE BFG198 handbook, full pagewidth 0.95 0.85 S 0.32 0.24 seating plane 6.7 6.3 3.1 2.9 0.1 S B 4 0.2 M A A 0.10 0.01 3.7 3.3 o 7.3 6.7 16 o max 16 1 1.80 max 10 max o 2 2.3 4.6 0.80 0.60 3 0.1 M B (4x) MSA035 - 1 Dimensions in mm. Fig.17 SOT223. 1995 Sep 12 11 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values BFG198 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 12 12 |
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